Fine Ceramics
We deal with silicon nitride (Si3N4) and aluminum nitride (AlN), materials possessing the highest standards in the world in terms of thermal conductivity and withstanding voltage, and with boron nitride (BN), having excellent insulation, heat resistance, and releasability. The highly advanced properties and features of our fine ceramics allow for a wide range of applications, such as in automobiles, semiconductors, and industrial machinery.
Silicon Nitride（Si3N4）
Products
Active metal copper (AMC) substrates
Plain substrates
Ball bearings
Automotive (on-board), industrial parts
Main Applications
Automotive (on-board) components
Power modules
Bearings
Industrial machinery
Characteristics
Withstand high voltage, high thermal conductivity, high reliability, wear-resistant, heat-resistant
Silicon nitride ceramics
Si3N4（SIN）
TSN-90
For electronic applications
TSN-03
For structural applications
Material
85～95
20
Thermal conductivity（W/m・K）
650
1000
Bending strength（MPa）
5～7
6～8
Fracture toughness（MPa・m1/2）
3
2.6
Linear expansion coefficient（×10-6/K）
>14
>14
Dielectric strength（kV/mm）
7～9
7～9
Relative permittivity
◎The value of a table is not a guaranteed performance.
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Aluminum Nitride（AlN）
Products
Plain substrates
Thin film metallized substrates
Main Applications
Semiconductor products
Semiconductor-manufacturing equipment
Automotive (on-board) components
Characteristics
High voltage tolerance, high thermal conductivity, high reliability
Aluminum nitride ceramics: White tile (plain substrates)
Material
Aluminum nitride (AlN)
TAN-170
TAN-230
TAN-200
TAN-250
Thermal conductivity（W/m・K）
160～180
220～235
190～210
240～255
Bending strength （MPa）
350
330
350
330
Fracture toughness（MPa・m1/2）
2～4
2～4
2～4
2～4
-6
4.5～4.6
4.5～4.6
4.5～4.6
4.5～4.6
Dielectric strength（kV/mm）
>14
>14
>14
>14
Relative permittivity
8～9
8～9
8～9
8～9
Aluminum nitride ceramics: Thin metallized film substrates
Material
Aluminum nitride (AlN)
TAN-200
TAN-170
TAN-230
TAN-250
190
160
220
240
0.20～0.35
±0.02
Thermal conductivity （W/m・K）
Thickness（mm）
Thickness difference（mm）
Aluminum nitride（AlN）material
Ti / Pt / Au
0.5～3.5（with pattern）
±20
Film structure
Film thickness（μｍ）
Precision of film thickness（％）
Thin conductor film
Au-Sn（Au: 66～76wt％）
1.5～3.5（with pattern）1.5～5.0（without pattern）
±20
Film structure
Film thickness（μｍ）
Precision of film thickness（％）
Solder film
Patterning precision （μｍ）
Pattern formation
±20
±30
Sheet adhesion
Cutting
Cutting precision（μｍ）
Delivery format
◎The value of a table is not a guaranteed performance.
Contact
Boron Nitride（BN）
Products
Fine powders
Sintered compact
Main Applications
Sintering jigs
Melting jigs
Release agents
Lubricants
Fillers
Characteristics
Insulating, heat-resistant, releasability, lubricating properties, thermal conductivity
Boron nitride products
BN-H
BN-HPL
BN-99
Material
BN-B
BN-C
BN-E
BN＞99.8％
BN＞99.8％
BN＞99.8％
Purity(%)
N+Zr+Al
BN+SiC
BN+AlN
White
White
White
Color
greyish white
greyish grey
greyish grey
1.5-1.6
1.3-1.4
1.9-2.0
Density（g/cm3)
2.25-2.35
2.40-2.50
2.45-2.95
≦0.1
≦0.1
≦0.4
Oxygen content（％）
－
－
－
>1014
>1014
>1014
Volume resistivity（Ω・cm）
>1013
>1012
>1013
≦900
≦900
≦2100
≦2100
≦1900
≦1900
≦900
≦2100
≦1900
Operating temp.
（℃）
≦1000
≦1000
≦1000
≦1750
≦1750
≦1800
≦1750
≦1750
≦1800
Air
Inert gas
Vacuum
28
15
30
Bending strength（MPa）
65
80
90
-0.37
-0.5
1.0
2.0
2.8
2.8
Coefficient of thermal expansion（10-6/℃）
50
50
50
30
40
85
Thermal conductivity（W/m･K）
Boron nitride powder
Material
BN-B
BN-E
BN-C
BN-N
BN-S
BN-SS
BN （%）
>99
>99
>99
>99
>99
>99
B2O3（%）
<0.2
<0.2
<0.15
<0.1
<0.1
<0.1
O （%）
<1
<1
<1
<1
<1
<1
C（%）
<0.2
<0.2
<0.2
<0.2
<0.2
<0.2
Fe（ppm）
<10
<10
<10
<10
<10
<10
Cr（ppm）
<10
<10
<10
<10
<10
<10
Ni （ppm）
<10
<10
<10
<10
<10
<10
Cu（ppm）
<10
<10
<10
<10
<10
<10
Mg（ppm）
<10
<10
<10
<10
<10
<10
H2O remaining（%）
<0.2
<0.2
<0.2
<0.2
<0.2
<0.2
Particle size（μm）
1.7
4.5
9.5
16
30
38
BET（m2/g）
30.3
11.5
9.2
3.0
2.0
1.5
◎The value of a table is not a guaranteed performance.
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